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Topic: Boiling point of Silicon Dioxide and Silicon Carbride  (Read 4280 times)

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Offline dumbnoob1010

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Boiling point of Silicon Dioxide and Silicon Carbride
« on: June 21, 2011, 09:32:35 PM »
I want to ask why the boiling point of SiO2 is smaller than that of SiC?

They both forms giant covalent network with Si tetrahedrally bonded to 4 O in the case of SiO2 and Si bonded tetrahedrally to 4 C in the case of SiC.
And I suppose a Si-C bond is weaker than Si-O bond because:
C has a larger covalent radius than O
=> bond length of Si-C > Si-O.
=> bond strength of Si-C < Si-O
So doesn't it make more sense the b.p. of SiO2 > SiC?

Offline AWK

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Re: Boiling point of Silicon Dioxide and Silicon Carbride
« Reply #1 on: June 22, 2011, 01:58:04 AM »
Look at wikipedia. Your consideration are rarther irrelevant because SiC sublimes .
AWK

Offline Immortal_FX127

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Re: Boiling point of Silicon Dioxide and Silicon Carbride
« Reply #2 on: June 22, 2011, 08:06:42 AM »
Maybe the structure of SiC network is more stable than SiO2 network. The former seems more symmetrical.

Offline dumbnoob1010

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Re: Boiling point of Silicon Dioxide and Silicon Carbride
« Reply #3 on: June 22, 2011, 04:01:26 PM »
Is it because in order to completely vaporize SiO2, only 2 Si-O bonds have to be broken per SiO2 molecule but 3 Si-C bonds have to be broken per SiC molecule?

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