I'd almost ask "how did we remove impurities" from silicon... because a heavy doping is for instance 1020 dopant atoms per cm3, or 0.2% impurities. Starting from silicon as pure as usual chemistry can deliver, crystallization over month timescale can reduce the impurity level to 1013/cm3. The remaining ones are boron, the hardest to remove by crystallization because of its atomic diameter and is a dopant, and oxygen, which comes from the melting pot but isn't a big worry and can be displaced later from the surface. Some carbon as well, which is acceptable.
Other dopants are introduced voluntarily, either during crystal growth (then as a uniform dopant) or locally, by diffusion from the surface (must be outdated) or by implantation of ions with an accelerator. Subsequent heat rearranges the crystal: dopants take normal locations in the crystal (from interstitial, they become substitutional). If silicon atoms must move away, they can fill previously void locations, or rearrange dislocations a bit, or move to the surface. It is known that doping silicon changes its volume. This can and does create stress, which is important when making mechanical parts like sensors.
SiliconE uses to designate a polymer, poly(dimethyl siloxane).
I didn't understand question 3. Can you reformulate it?